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APT10M09B2VFR 参数 Datasheet PDF下载

APT10M09B2VFR图片预览
型号: APT10M09B2VFR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V是新一代高压N沟道增强型功率MOSFET 。 [Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网
文件页数/大小: 2 页 / 43 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT10M09B2VFR的Datasheet PDF文件第1页  
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT10M09 B2VFR - LVFR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
V
GS
= 15V
MIN
TYP
MAX
UNIT
pF
10030
3730
1370
340
109
131
18
36
51
9
nC
Gate-Source Charge
Turn-on Delay Time
Rise Time
Gate-Drain ("Miller") Charge
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Pulsed Source Current
1
Continuous Source Current (Body Diode)
(Body Diode)
6
Diode Forward Voltage
Peak Diode Recovery
dv
/
dt
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
L
A
IC
N
H
C N
TE IO
D AT
E
C
M
N
R
A
V
FO
D IN
A
I
D
= I
D
[Cont.] @ 25°C
V
DD
= 0.5 V
DSS
R
G
= 0.6W
I
D
= I
D
[Cont.] @ 25°C
MIN
TYP
2
ns
MAX
UNIT
Amps
Volts
V/ns
ns
100
400
1.3
5
(V
GS
= 0V, I
S
= -I
D
[Cont.])
T
j
= 25°C
T
j
= 25°C
190
370
T
j
= 125°C
0.4
1.7
9
15
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.20
40
4
Starting T = +25°C, L = 600µH, R = 25W, Peak I = 100A
j
G
L
5
The maximum current is limited by lead temperature.
6
I
£
-I [Cont.],
di
/
= 100A/µs, V = 50V, T
£
150°C, R = 2.0W
S
D
R
j
G
dt
1
Repetitive Rating: Pulse width limited by maximum T
j
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Collector
Collector
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
050-5905 rev- 11-99
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Gate
Collector
Emitter
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058