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APT10M07JVFR 参数 Datasheet PDF下载

APT10M07JVFR图片预览
型号: APT10M07JVFR
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压N沟道增强型功率MOSFET [High Voltage N-Channel enhancement mode power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 4 页 / 120 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT10M07JVFR的Datasheet PDF文件第1页浏览型号APT10M07JVFR的Datasheet PDF文件第2页浏览型号APT10M07JVFR的Datasheet PDF文件第4页  
APT10M07JVFR
360
I
D
, DRAIN CURRENT (AMPERES)
VGS=7V, 8V, 9V, 10V & 15V
I
D
, DRAIN CURRENT (AMPERES)
360
6.5V
300
240
180
120
60
0
VGS=15V
10V
9V
8V
7V
6.5V
6V
300
240
6V
180
120
60
0
5.5V
5.5V
5V
4.5V
5V
4.5V
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
360
I
D
, DRAIN CURRENT (AMPERES)
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.10
V
GS
TJ = -55°C
TJ = +25°C
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
300
240
180
120
60
0
1.05
1.00
0.95
0.90
0.85
0.80
VGS=10V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=20V
0
100
200
300
400
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
250
I
D
, DRAIN CURRENT (AMPERES)
200
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
150
1.05
100
1.00
50
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
25
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0.90
-50
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
1.1
1.0
0.9
0.8
0.7
0.6
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-5846 Rev A
9-2004