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APT10078BFLL_06 参数 Datasheet PDF下载

APT10078BFLL_06图片预览
型号: APT10078BFLL_06
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。 [Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.]
分类和应用:
文件页数/大小: 5 页 / 203 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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Typical Performance Curves
90%
10%
Gate Voltage
T
J
125°C
APT10078BFLL_SFLL
Gate Voltage
t
d(on)
90%
t
d(off)
Drain Voltage
T 125°C
J
t
r
Drain Current
90%
t
f
10%
0
5%
Switching Energy
10%
5%
Drain Voltage
Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V
DD
I
C
V
CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7040 Rev D
Gate
Drain
Source
5.45 (.215) BSC
{2 Plcs.}
Heat Sink (Drain)
and Leads
are Plated
4-2006
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
3.81 (.150)
4.06 (.160)
(Base of Lead)