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APT10040B2VR 参数 Datasheet PDF下载

APT10040B2VR图片预览
型号: APT10040B2VR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V是新一代高压N沟道增强型功率MOSFET [Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压
文件页数/大小: 4 页 / 78 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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Typical Preformance Curves
60
50
VGS =7, 10 &15V
6V
40
30
5V
20
5.5V
Graph Deleted
I
D
, DRAIN CURRENT (AMPERES)
10
0
4.5V
4V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
5
10
15
20
25
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
V
GS
80
70
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.15
60
50
40
30
20
10
0
0
TJ = +125°C
1
2
3
4
5
6
7
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
1.1
VGS=10V
1.05
VGS=20V
TJ = +25°C
TJ = -55°C
1.0
0.95
0.90
0
10
15
20
25
30 35
40
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
5
25
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
I
D
, DRAIN CURRENT (AMPERES)
20
1.10
15
1.05
10
1.00
5
0.95
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3.0
I
D
0
0.90
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
050-5909 Rev A 5-2002
25
-50
= 0.5 I
V
GS
D
[Cont.]
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
2.5