APT10035B2FLL - LFLL
112
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
Ciss
C, CAPACITANCE (pF)
50
100µS
10
1,000
Coss
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1mS
10mS
= 28A
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
Crss
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
100
12
VDS=200V
VDS=500V
TJ =+150°C
TJ =+25°C
10
8
VDS=800V
4
50
100
150
200
250
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
180
160
140
t
d(on)
and t
d(off)
(ns)
0
0
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
V
DD
G
= 670V
t
d(off)
60
V
DD
G
R
= 5Ω
T = 125°C
J
L = 100µH
t
f
120
100
80
60
40
20
0
0
= 670V
R
= 5Ω
T = 125°C
J
t
r
and t
f
(ns)
L = 100µH
40
t
r
20
t
d(on)
0
10
20
30
40
50
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
30
40
50
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
V
DD
G
0
10
20
2500
= 670V
R
= 5Ω
E
on
SWITCHING ENERGY (µJ)
2000
SWITCHING ENERGY (µJ)
T = 125°C
J
4000
L = 100µH
E
ON
includes
diode reverse recovery.
E
off
1500
3000
E
on
2000
1000
V
I
DD
= 670V
3-2003
D
J
= 28A
500
E
off
0
30
40
50
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
10
20
1000
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7037 Rev B
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
ADPOW [ ADVANCED POWER TECHNOLOGY ]
