DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT10026JN
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6Ω
MIN
TYP
MAX
UNIT
11610
1345
415
465
83
61
21
19
70
14
14000
1880
620
700
125
90
40
40
105
30
ns
nC
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
1
MIN
APT10026JN
TYP
MAX
UNIT
33
132
1.8
1250
49
2000
70
Amps
APT10026JN
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Volts
ns
µC
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
PACKAGE CHARACTERISTICS
Symbol
L
D
L
S
V
Isolation
C
Isolation
Torque
Characteristic / Test Conditions
Internal Drain Inductance
(Measured From Drain Terminal to Center of Die.)
Internal Source Inductance
(Measured From Source Terminals to Source Bond Pads)
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
(f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
MIN
TYP
MAX
UNIT
nH
Volts
3
5
2500
70
13
pF
lb•in
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
0.2
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.1
0.05
D=0.5
0.2
0.1
0.01
0.005
0.05
Note:
PDM
0.02
0.01
t1
t2
050-0038 Rev F
0.001
0.0005
10
-5
SINGLE PULSE
10
-4
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
ADPOW [ ADVANCED POWER TECHNOLOGY ]
