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APT10021JLL_04 参数 Datasheet PDF下载

APT10021JLL_04图片预览
型号: APT10021JLL_04
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7是新一代低损耗,高电压,N沟道增强型功率MOSFET 。 [Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.]
分类和应用:
文件页数/大小: 5 页 / 155 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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Typical Performance Curves
90%
10%
Gate Voltage
APT10021JLL
t
d(on)
t
r
90%
5%
10%
Switching Energy
Drain Current
5%
Drain Voltage
T
J
125°C
t
d(off)
90%
Gate Voltage
Drain Voltage
T 125°C
J
t
f
10%
0
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V
DD
I
C
V
CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Dimensions in Millimeters and (Inches)
ISOTOP
®
is a Registered Trademark of SGS Thomson.
Gate
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7017 Rev C
4-2004
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)