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APT1001R6BLL 参数 Datasheet PDF下载

APT1001R6BLL图片预览
型号: APT1001R6BLL
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN]
分类和应用:
文件页数/大小: 4 页 / 67 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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Typical Performance Curves
18
I
D
, DRAIN CURRENT (AMPERES)
APT1001R6BLL/SLL
16
7V
14
12
10
8
6
4
2
0
5.5V
5V
6V
VGS =15,10 & 7.5V
6.5V
RC MODEL
Junction
temp. ( ”C)
0.205
Power
(Watts)
0.264
Case temperature
0.0981F
0.00544F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
20
18
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.40
NORMALIZED TO
= 10V 4A
V
GS
16
14
12
10
8
6
4
2
0
1.30
1.20
VGS=10V
1.10
VGS=20V
TJ = -55°C
TJ = +125°C
1.00
TJ = +25°C
0.90
0.80
0
1
2
3
4
5
6
7
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
2
4
6
8
10
12 14
16
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
I
D
, DRAIN CURRENT (AMPERES)
7
6
5
4
3
2
1
0
25
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
I
V
D
8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
= 4A
= 10V
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
2.0
1.1
1.0
0.9
0.8
1.5
1.0
0.5
0.7
0.6
-50
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7134 Rev -
3-2003