33
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
5,000
APT1001R6BFLL_SFLL
Ciss
10
5
C, CAPACITANCE (pF)
100µS
1,000
Coss
100
Crss
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1mS
10mS
.1
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 8A
200
100
12
VDS=200V
VDS=500V
8
VDS=800V
TJ =+150°C
TJ =+25°C
10
4
20
30
40
50
60 70 80
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
40
35
30
t
d(off)
0
0
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
40
35
30
t
f
t
d(on)
and t
d(off)
(ns)
R
G
= 5Ω
20
15
10
5
0
4
T = 125°C
J
t
r
and t
f
(ns)
25
V
DD
= 667V
25
20
15
10
5
t
r
V
DD
G
L = 100µH
= 667V
R
= 5Ω
T = 125°C
J
L = 100µH
t
d(on)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
6
8
10
12
14
10
12
14
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
500
E
on
SWITCHING ENERGY (µJ)
0
4
6
8
800
= 667V
R
= 5Ω
T = 125°C
J
SWITCHING ENERGY (µJ)
600
L = 100µH
E
ON
includes
diode reverse recovery.
E
on
400
V
DD
= 667V
300
I
D
J
= 8A
400
T = 125°C
200
L = 100µH
E
ON
includes
diode reverse recovery.
4-2004
200
E
off
0
4
6
8
10
12
14
100
E
off
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
050-7126 Rev A
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
ADPOW [ ADVANCED POWER TECHNOLOGY ]
