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APT1001R3BN 参数 Datasheet PDF下载

APT1001R3BN图片预览
型号: APT1001R3BN
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网高电压电源
文件页数/大小: 4 页 / 56 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT1001R1/1001R3BN
60
I
D
, DRAIN CURRENT (AMPERES)
APT1001R1BN
APT1001R3BN
OPERATION HERE
LIMITED BY R
(ON)
DS
10,000
10µS
C
C, CAPACITANCE (pF)
100µS
iss
APT1001R1BN
10
APT1001R3BN
1,000
C
oss
1mS
10mS
1
T
T
C
=+25°C
100mS
DC
=+150°C
J
SINGLE PULSE
.1
100
C
rss
APT1001R1/1001R3BN
1
5 10
50 100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
50
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
16
V
V
=100V
DS
12
=200V
DS
V
=500V
20
10
5
T = +150°C
J
T = +25°C
J
8
DS
4
2
1
40
80
120
160
200
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
.5
1.0
1.5
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
050-0007 Rev C
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)