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APT1001R1BN 参数 Datasheet PDF下载

APT1001R1BN图片预览
型号: APT1001R1BN
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网高电压电源
文件页数/大小: 4 页 / 56 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT1001R1/1001R3BN
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.8Ω
MIN
TYP
MAX
UNIT
2460
360
105
90
9.3
47
15
16
64
24
2950
500
160
130
14
70
30
32
95
48
ns
nC
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions / Part Number
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
1
MIN
APT1001R1BN
APT1001R3BN
APT1001R1BN
APT1001R3BN
TYP
MAX
UNIT
10.5
10
42
40
1.3
636
4.5
1200
11
Volts
ns
µC
Amps
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
Test Conditions / Part Number
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
APT1001R1BN
APT1001R3BN
MIN
TYP
MAX
UNIT
Watts
310
310
42
40
Amps
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
SINGLE PULSE
0.001
10
-5
PDM
0.02
0.01
Note:
t1
t2
Duty Factor D = t1/t
2
Peak TJ = PDM x Z
θJC
+ TC
050-0007 Rev C
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4