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APL502B2 参数 Datasheet PDF下载

APL502B2图片预览
型号: APL502B2
PDF下载: 下载PDF文件 查看货源
内容描述: 线性MOSFET [LINEAR MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管脉冲
文件页数/大小: 4 页 / 72 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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Typical Performance Curves
120
VGS=10V, 15 V
I
D
, DRAIN CURRENT (AMPERES)
APL502B2-L
120
VGS=10, 15V
100
8V
80
7.5 V
60
7V
40
20
0
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
VOLTAGE (NORMALIZED)
I
D
, DRAIN CURRENT (AMPERES)
100
8V
80
7.5 V
60
7V
40
6.5 V
6V
5.5 V
0
0
50
100
150
200
250
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
80
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
6.5 V
6V
5.5 V
20
1.30
NORMALIZED TO
= 10V @ 29A
V
GS
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
1.20
VGS=10V
1.10
60
40
1.00
0.90
20
TJ = +125°C
TJ = -55°C
TJ = +25°C
0.80
0.70
0
VGS=20V
0
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
60
20
40
60
80
100
120
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
I
D
, DRAIN CURRENT (AMPERES)
50
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
1.15
1.10
40
1.05
30
20
1.00
10
0
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
0.90
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
050-5896 Rev D
8-2003