欢迎访问ic37.com |
会员登录 免费注册
发布采购

APL501J 参数 Datasheet PDF下载

APL501J图片预览
型号: APL501J
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 晶体晶体管功率场效应晶体管脉冲高压局域网高电压电源
文件页数/大小: 4 页 / 75 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APL501J的Datasheet PDF文件第1页浏览型号APL501J的Datasheet PDF文件第2页浏览型号APL501J的Datasheet PDF文件第4页  
APL501J
TJ = -55°C
I
D
, DRAIN CURRENT (AMPERES)
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
40
TJ = +25°C
30
TJ = +125°C
1.30
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.20
VGS=10V
1.10
20
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.00
10
TJ = +125°C
TJ = +25°C
TJ = -55°C
0.90
VGS=20V
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
50
I
D
, DRAIN CURRENT (AMPERES)
0
0.80
0
20
40
60
80
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
40
30
20
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
10
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
25
2.5
I
D
= 0.5 I
V
GS
D
[Cont.]
= 10V
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
2.0
1.1
1.0
0.9
1.5
1.0
0.8
0.7
0.6
-50
0.5
0.0
-50
-25 0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
OPERATION HERE
LIMITED BY RDS (ON)
-25 0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
175
100
I
D
, DRAIN CURRENT (AMPERES)
30,000
100µS
10,000
1mS
C, CAPACITANCE (pF)
50
5,000
Ciss
10
5
10mS
100mS
1
.5
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
1,000
500
Coss
Crss
2-2002
050-5903
Rev D
.1
1
5 10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
100
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE