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2N5031 参数 Datasheet PDF下载

2N5031图片预览
型号: 2N5031
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管微波放大器
文件页数/大小: 4 页 / 113 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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2N5031
ELECTRICAL SPECIFICATIONS (Tcase = 25° C)
25
°
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 0.01 mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 0.01mAdc, IC = 0)
Collector Cutoff Current
(VCE = 6.0 Vdc, IE = 0 Vdc)
Value
Min.
10
15
3.0
-
Typ.
-
-
-
1.0
Max.
-
-
-
10
Unit
Vdc
Vdc
Vdc
nA
(on)
HFE
DC Current Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc)
25
-
300
-
DYNAMIC
Symbol
f
T
CCB
Test Conditions
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
Output Capacitance
(IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)
Value
Min.
1200
-
Typ.
-
2.5
Max.
2500
-
Unit
MHz
dB
FUNCTIONAL
Symbol
Test Conditions
Maximum Unilateral Gain (1)
Maximum Available Gain
IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
Value
Min.
-
-
Typ.
12
12.4
Max.
-
-
Unit
dB
dB
G
U max
MAG
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.