1517-20M
20 Watts, 36 Volts, 200µs, 10%
Radar 1480 to 1650 MHz
GENERAL DESCRIPTION
The 1517-20M is an internally matched, COMMON BASE transistor capable of
providing 20 Watts of pulsed RF output power at 200 microseconds pulse width,
10% duty factor across the band 1480 to 1650 MHz. This hermetically solder-
sealed transistor is specifically designed for upper L-Band radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55LV-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
175
Device Dissipation @25°C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
CES
)
70
Emitter to Base Voltage (BV
EBO
)
3
Collector Current (I
C
)
3
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
°C
°C
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
g
η
c
IR
L
Pd
VSWR
1
CHARACTERISTICS
Power Output
Power Gain
Collector Efficiency
Input Return Loss
Pulse Droop
Load Mismatch Tolerance
TEST CONDITIONS
F = 1480-1650 MHz
Vcc = 36 Volts
Pin = 3.5 W
Pulse Width = 200µs
Duty Factor = 10%
F=1480 MHz, Pin = 3.5W
MIN
20
7.6
40
9
0.5
3.0:1
TYP
25
MAX
30
9.3
UNITS
W
dB
%
dB
dB
ELECTRICAL CHARACTERISTICS @ 25°C
I
EBO
BV
CES
h
FE
θjc
1
Emitter cut-off current
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
V
EB
= 3 V
I
C
= 15 mA
V
CE
= 5V, I
c
= 500 mA
3
65
20
1
mA
V
°C/W
NOTES: 1. Pulse condition of 200µsec, 10%
Issue Jan 2006
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120