1517-110M 参数 Datasheet PDF下载

1517-110M

110 Watts, 40 Volts, 200µs, 10%

Radar 1480 to 1650 MHz

GENERAL DESCRIPTION

The 1517-110M is an internally matched, COMMON BASE transistor capable

of providing 110 Watts of pulsed RF output power at 200 microseconds pulse

width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically

solder-sealed transistor is specifically designed for upper L-Band radar

applications. It utilizes gold metallization and diffused emitter ballasting to

provide high reliability and supreme ruggedness.

CASE OUTLINE

55AW-1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

350

Device Dissipation @25°C

1

Maximum Voltage and Current

Collector to Base Voltage (BV

CES

)

70

Emitter to Base Voltage (BV

EBO

)

3

Collector Current (I

C

)

9

Maximum Temperatures

Storage Temperature

-65 to +200

Operating Junction Temperature

+200

W

V

V

A

°C

°C

FUNCTIONAL CHARACTERISTICS @ 25°C

SYMBOL

P

out

P

g

η

c

IR

L

Pd

VSWR

1

CHARACTERISTICS

Power Output

Power Gain

Collector Efficiency

Input Return Loss

Pulse Droop

Load Mismatch Tolerance

TEST CONDITIONS

F = 1480-1650 MHz

Vcc = 40 Volts

Pin = 20.5 W

Pulse Width = 200µs

Duty Factor = 10%

F=1480 MHz, Pin = 20.5 W

MIN

110

7.3

40

9

0.5

3:1

TYP

120

MAX

150

8.6

UNITS

W

dB

%

dB

dB

ELECTRICAL CHARACTERISTICS @ 25°C

I

EBO

BV

CES

h

FE

θjc

1

Emitter cutoff current

Collector to Emitter Breakdown

DC – Current Gain

Thermal Resistance

V

EB

= 3 V

I

C

= 40 mA

V

CE

= 5V, I

c

= 1A

10

70

20

0.5

mA

V

°C/W

NOTES: 1. Pulse condition of 200µsec, 10%

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