1214-370MR4
.
370 Watts - 50 Volts, 330
µs,
10%
Radar 1200 - 1400 MHz
1214 – 370M
GENERAL DESCRIPTION
The 1214-370M is an internally matched, COMMON BASE transistor
capable of providing 370 Watts of pulsed RF output power at 330
microseconds pulse width, ten percent duty factor across the band 1200 to
1400 MHz. This hermetically solder-sealed transistor is specifically designed
for L-Band radar applications. It utilizes gold metallization and diffused
emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55ST, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
1
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
600 Watts
75 Volts
3.0 Volts
25 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pg
η
c
Pd
VSWR
1
CHARACTERISTICS
Power Out (Note 2) Pulsed
Power Gain
Collector Efficiency
Pulse Amplitude Droop
Load Mismatch Tolerance
TEST CONDITIONS
F = 1200-1400 MHz
Vcc = 50 Volts,
Pulse Width = 330
µs
Duty = 10 %
As above
F = 1400MHz, Po =370W
MIN
370
8.7
50
9.0
0.5
2:1
TYP
MAX
460
UNITS
Watts
dB
%
dB
** Design Target
Bvces
Ices
Iebo
Hfe
θ
jc
1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage Current
DC Current Gain
Thermal Resistance
Ic = 40 mA
Vce = 50 Volts
Veb = 3.0 Volts
Vce = 5 V, Ic = 5 A
Rated Pulse Condition
75
10
5
10
45
0.29
o
Volts
mA
mA
C/W
Issue April 2005
Note 1: Pulse width = 330 us, duty = 10%
Note 2: Power Input = 50 Watts Peak Pulsed
APT-RF, Inc. reserves the right to make changes without further notice. APT-RF recommends that before the product(s) described herein are written into
specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory.
APT-RF, Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
ADPOW [ ADVANCED POWER TECHNOLOGY ]
