0910-300M
0910– 300M
300 Watts - 50 Volts, 150µs, 5%
Radar 890 - 1000 MHz
GENERAL DESCRIPTION
The 0910-300M is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at 150
µs
pulse width, , 5%
duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed
transistor is specifically designed for P-Band radar applications. It utilizes gold
metallization and diffused emitter ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
600 Watts
65 Volts
3.5 Volts
20 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pg
η
c
Rl
Droop
VSWR
1
VSWRs
CHARACTERISTICS
TEST CONDITIONS
Freq = 890 – 1000 MHz
Vcc = 50 Volts
Pin = 33 Watts
Pulse Width = 150µs
Duty Factor = 5%
MIN
TYP
MAX
UNITS
Power Out
Power Gain
Collector Efficiency
Input Return loss
Load Mismatch Tolerance
Droop
Load Mismatch - Stability
300
9.6
40
-9
425
45
0.5
3:1
2:1
Watts
dB
%
dB
dB
Note 1: Pulse condition of 150µsec, 10%.
Bvces
Ices
θ
jc
1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance
Ic = 80 mA
Vce = 50 Volts
Rated Pulse Condition
65
15
0.29
Volts
mA
o
C/W
Issue Nov 2005
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE
AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324