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AT45DB081D-SU 参数 Datasheet PDF下载

AT45DB081D-SU图片预览
型号: AT45DB081D-SU
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位2.5V或2.7V的DataFlash [8-megabit 2.5V or 2.7V DataFlash]
分类和应用: 内存集成电路光电二极管异步传输模式PCATM时钟
文件页数/大小: 53 页 / 1867 K
品牌: ADI [ ADI ]
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7.6  
Sector Erase  
The Sector Erase command can be used to individually erase any sector in the main memory.  
There are 16 sectors and only one sector can be erased at one time. To perform sector 0a or  
sector 0b erase for the DataFlash standard page size (264-bytes), an opcode of 7CH must be  
loaded into the device, followed by three address bytes comprised of three don’t care bits, nine  
page address bits (PA11 - PA3) and 12 don’t care bits. To perform a sector 1-15 erase, the  
opcode 7CH must be loaded into the device, followed by three address bytes comprised of  
three don’t care bits, four page address bits (PA11 - PA8) and 17 don’t care bits. To perform  
sector 0a or sector 0b erase for the binary page size (256-bytes), an opcode of 7CH must be  
loaded into the device, followed by three address bytes comprised of four don’t care bit and nine  
page address bits (A19 - A11) and 11 don’t care bits. To perform a sector 1-15 erase, the  
opcode 7CH must be loaded into the device, followed by three address bytes comprised of four  
don’t care bit and four page address bits (A19 - A16) and 16 don’t care bits. The page address  
bits are used to specify any valid address location within the sector which is to be erased. When  
a low-to-high transition occurs on the CS pin, the part will erase the selected sector. The erase  
operation is internally self-timed and should take place in a maximum time of tSE. During this  
time, the status register will indicate that the part is busy.  
Table 7-2.  
Sector Erase Addressing  
PA11/  
A19  
PA10/  
A18  
PA9/  
A17  
PA8/  
A16  
PA7/  
A15  
PA6/  
A14  
PA5/  
A13  
PA4/  
A12  
PA3/  
A11  
PA2/  
A10  
PA1/  
A9  
PA0/  
A8  
Sector  
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
0
0
0
0
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
0a  
0b  
1
X
X
X
X
X
X
X
X
X
X
2
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
12  
13  
14  
15  
7.7  
Chip Erase  
The entire main memory can be erased at one time by using the Chip Erase command.  
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH  
must be clocked into the device. Since the entire memory array is to be erased, no address  
bytes need to be clocked into the device, and any data clocked in after the opcode will be  
ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deas-  
serted to start the erase process. The erase operation is internally self-timed and should take  
place in a time of tCE. During this time, the Status Register will indicate that the device is busy.  
The Chip Erase command will not affect sectors that are protected or locked down; the contents  
of those sectors will remain unchanged. Only those sectors that are not protected or locked  
down will be erased.  
10  
AT45DB081D  
3596O–DFLASH–1/2013