AMP01
ELECTRICAL CHARACTERISTICS
(@ V =
S
15 V, R
S
= 10 k , R
L
= 2 k , T
A
= +25 C, unless otherwise noted)
AMP01NBC
Typical
0.15
20
40
3
0.0007
5
0.15
0.12
2
26
4.5
50
AMP01GBC
Typical
0.30
50
50
5
0.0007
5
0.15
0.12
2
26
4.5
50
Units
µV/°C
µV/°C
pA/°C
pA/°C
%
nV/√Hz
pA/√Hz
µV
p-p
pA p-p
kHz
V/µs
µs
Parameter
Input Offset Voltage Drift
Output Offset Voltage Drift
Input Bias Current Drift
Input Offset Current Drift
Nonlinearity
Voltage Noise Density
Current Noise Density
Voltage Noise
Current Noise
Symbol
TCV
IOS
TCV
OOS
TCI
B
TCI
OS
e
n
i
n
e
n
p-p
i
n
p-p
Conditions
R
G
=
∞
G = 1000
G = 1000
f
O
= 1 kHz
G = 1000
f
O
= 1 kHz
G = 1000
0.1 Hz to 10 Hz
G = 1000
0.1 Hz to 10 Hz
G = 1000
G = 10
To 0.01%, 20 V Step
G = 1000
Small-Signal Bandwidth (–3 dB) BW
Slew Rate
SR
Settling Time
t
S
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
REV. D
–7–