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ADR444BRZ 参数 Datasheet PDF下载

ADR444BRZ图片预览
型号: ADR444BRZ
PDF下载: 下载PDF文件 查看货源
内容描述: 超低噪声, LDO XFET基准电压与电流吸收和源 [Ultralow Noise, LDO XFET Voltage References with Current Sink and Source]
分类和应用: 电源电路参考电压源光电二极管输出元件PC
文件页数/大小: 20 页 / 568 K
品牌: ADI [ ADI ]
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ADR440/ADR441/ADR443/ADR444/ADR445  
SPECIFICATIONS  
ADR440 ELECTRICAL CHARACTERISTICS  
VIN = 3 V to 18 V, TA = 25°C, CIN = COUT = 0.1 μF, unless otherwise noted.  
Table 2.  
Parameter  
OUTPUT VOLTAGE  
A Grade  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VO  
2.045  
2.047  
2.048  
2.048  
2.051  
2.049  
V
V
B Grade  
INITIAL ACCURACY  
A Grade  
VOERR  
3
0.15  
1
mV  
%
mV  
%
B Grade  
0.05  
TEMPERATURE DRIFT  
A Grade  
B Grade  
TCVO  
−40°C < TA < +125°C  
−40°C < TA < +125°C  
−40°C < TA < +125°C  
2
1
10  
3
ppm/°C  
ppm/°C  
ppm/V  
LINE REGULATION  
LOAD REGULATION  
ΔVO/ΔVIN  
−20  
−50  
−50  
+10  
+20  
ΔVO/ΔILOAD  
ILOAD = 0 mA to 10 mA, VIN = 3.5 V,  
−40°C < TA < +125°C  
ILOAD = 0 mA to −5 mA, VIN = 3.5 V,  
−40°C < TA < +125°C  
+50  
ppm/mA  
ΔVO/ΔILOAD  
+50  
3.75  
ppm/mA  
mA  
QUIESCENT CURRENT  
IIN  
No load, −40°C < TA < +125°C  
0.1 Hz to 10 Hz  
3
VOLTAGE NOISE  
eN p-p  
eN  
1
μV p-p  
nV/√Hz  
μs  
VOLTAGE NOISE DENSITY  
TURN-ON SETTLING TIME  
LONG-TERM STABILITY1  
1 kHz  
45  
10  
50  
70  
−75  
27  
tR  
VO  
1000 hours  
fIN = 10 kHz  
ppm  
ppm  
dB  
OUTPUT VOLTAGE HYSTERESIS  
RIPPLE REJECTION RATIO  
SHORT CIRCUIT TO GND  
SUPPLY VOLTAGE OPERATING RANGE  
SUPPLY VOLTAGE HEADROOM  
VO_HYS  
RRR  
ISC  
mA  
VIN  
3
18  
V
VIN − VO  
500  
mV  
1 The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.  
Rev. A | Page 3 of 20  
 
 
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