ADR01/ADR02/ADR03/ADR06
SPECIFICATIONS
Data Sheet
ADR01 ELECTRICAL CHARACTERISTICS
VIN = 12.0 V to 36.0 V, VIN = 12.0 V to 24.0 V for ADR01WARZ, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
VO
Conditions
Min
Typ
Max
Unit
V
OUTPUT VOLTAGE
INITIAL ACCURACY
A and C grades
A and C grades
9.990
10.000
10.010
10
VOERR
mV
0.1
10.005
5
0.05
10.014
14
%
OUTPUT VOLTAGE
INITIAL ACCURACY
VO
B grade
B grade
9.995
9.986
10.000
V
VOERR
mV
%
OUTPUT VOLTAGE
INITIAL ACCURACY
VO
ADR01WARZ
ADR01WARZ
10.000
V
VOERR
mV
0.14
10
25
25
3
9
9
40
%
A grade, 8-lead SOIC, −40°C < TA < +125°C
A grade, 5-lead TSOT, –40°C < TA < +125°C
A grade, 5-lead SC70, –40°C < TA < +125°C
B grade, 8-lead SOIC, –40°C < TA < +125°C
B grade, 5-lead TSOT, –40°C < TA < +125°C
B grade, 5-lead SC70, –40°C < TA < +125°C
C grade, 8-lead SOIC, –40°C < TA < +125°C
3
ppm/°C
ppm/°C
ppm/°C
ppm/°C
ppm/°C
ppm/°C
ppm/°C
V
1
10
DROPOUT VOLTAGE
LINE REGULATION
VDO
2
∆VO/∆VIN
VIN = 12.0 V to 36.0 V, VIN = 12.0 V to 26.0 V for
ADR01WARZ, –40°C < TA < +125°C
7
30
70
1
ppm/V
LOAD REGULATION
∆VO/∆ILOAD
ILOAD = 0 mA to 10 mA, –40°C < TA < +125°C,
40
ppm/mA
V
IN = 15.0 V
QUIESCENT CURRENT
IIN
No load, –40°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
0.65
20
mA
VOLTAGE NOISE
eN p-p
eN
µV p-p
nV/√Hz
µs
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY1
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
TEMPERATURE SENSOR
Voltage Output at TEMP Pin
Temperature Sensitivity
510
4
tR
∆VO
∆VO_HYS
RRR
ISC
1000 hours
fIN = 10 kHz
50
ppm
ppm
dB
70
−75
30
mA
VTEMP
TCVTEMP
550
1.96
mV
mV/°C
1 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
Rev. R | Page 4 of 20
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