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ADM3485EAR-REEL 参数 Datasheet PDF下载

ADM3485EAR-REEL图片预览
型号: ADM3485EAR-REEL
PDF下载: 下载PDF文件 查看货源
内容描述: 为± 15 kV的ESD保护, 3.3 V , 12 Mbps的EIA RS - 485 / RS - 422收发器 [±15 kV ESD-Protected, 3.3 V,12 Mbps, EIA RS-485/RS-422 Transceiver]
分类和应用: 线路驱动器或接收器驱动程序和接口接口集成电路光电二极管信息通信管理
文件页数/大小: 16 页 / 303 K
品牌: ADI [ ADI ]
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ADM3485E  
STANDARDS AND TESTING  
Table 6 compares RS-422 and RS-485 interface standards, and  
Table 7 and Table 8 show transmitting and receiving truth tables.  
influenced by humidity, temperature, barometric pressure,  
distance, and rate of closure of the discharge gun. The contact  
discharge method, while less realistic, is more repeatable and is  
gaining acceptance and preference over the air-gap method.  
Table 6.  
Specification  
RS-422  
Differential  
10 Mbps  
4000 ft  
2 V  
100 Ω  
4 kΩ min  
200 mV  
RS-485  
Differential  
10 Mbps  
4000 ft  
1.5 V  
54 Ω  
Although very little energy is contained within an ESD pulse,  
the extremely fast rise time, coupled with high voltages, can  
cause failures in unprotected semiconductors. Catastrophic  
destruction can occur immediately as a result of arcing or  
heating. Even if catastrophic failure does not occur immediately,  
the device can suffer from parametric degradation, which can  
result in degraded performance. The cumulative effects of  
continuous exposure can eventually lead to complete failure.  
Transmission Type  
Maximum Data Rate  
Maximum Cable Length  
Minimum Driver Output Voltage  
Driver Load Impedance  
Receiver Input Resistance  
Receiver Input Sensitivity  
Receiver Input Voltage Range  
Number of Drivers/Receivers per Line  
12 kΩ min  
200 mV  
−7 V to +7 V −7 V to +12 V  
1/10 32/32  
I/O lines are particularly vulnerable to ESD damage. Simply  
touching or plugging in an I/O cable can result in a static  
discharge that can damage or completely destroy the interface  
product connected to the I/O port. It is extremely important,  
therefore, to have high levels of ESD protection on the I/O lines.  
Table 7. Transmitting Truth Table  
Transmitting Inputs  
Transmitting Outputs  
A
RE  
DE  
DI  
B
X1  
X1  
0
1
1
0
0
1
0
X1  
X1  
0
1
1
0
The ESD discharge could induce latch-up in the device under  
test, so it is important that ESD testing on the I/O pins be  
carried out while device power is applied. This type of testing is  
more representative of a real-world I/O discharge, where the  
equipment is operating normally when the discharge occurs.  
High-Z2  
High-Z2  
High-Z2  
High-Z2  
1
1 X = don't care.  
2 High-Z = high impedance.  
Table 9. ESD Test Results  
ESD Test Method  
Table 8. Receiving Truth Table  
I/O Pins  
Receiving Inputs  
Receiving Outputs  
Human Body Model  
15 kV  
RE  
DE  
A – B RO  
0
0
0
1
X1  
X1  
X1  
X1  
> +0.2 V  
< –0.2 V  
Inputs open  
X1  
1
0
1
100%  
90%  
High-Z2  
1 X = don't care.  
2 High-Z = high impedance.  
ESD TESTING  
36.8%  
Two coupling methods are used for ESD testing, contact  
discharge and air-gap discharge. Contact discharge calls for a  
direct connection to the unit being tested. Air-gap discharge  
uses a higher test voltage but does not make direct contact with  
the unit under test. With air-gap discharge, the discharge gun is  
moved toward the unit under test, developing an arc across the  
air gap, hence the term air-gap discharge. This method is  
10%  
TIME  
t
tDL  
tRL  
Figure 24. Human Body Model Current Waveform  
Rev. D | Page 11 of 16