ADG431/ADG432/ADG433
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25°C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
V
L
to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
DD
+ 0.3 V
Analog, Digital Inputs
2
. . . . . . . . . . V
SS
– 2 V to V
DD
+ 2 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 76°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG431/ADG432/ADG433 features proprietary ESD protection circuitry, perma-
nent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
PIN CONFIGURATION
(DIP/SOIC)
IN1
1
D1
2
S1
3
V
SS 4
16
IN2
15
D2
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Model
1
ADG431BN
ADG431BR
ADG431TQ
ADG431ABR
ADG432BN
ADG432BR
ADG432TQ
ADG432ABR
ADG433BN
ADG433BR
ADG433ABR
Temperature Range
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package Options
2
N-16
R-16A
Q-16
R-16A
3
N-16
R-16A
Q-16
R-16A
3
N-16
R-16A
R-16A
3
13
V
DD
TOP VIEW
GND
5
(Not to Scale)
12
V
L
ADG431
ADG432
ADG433
14
S2
S4
6
D4
7
IN4
8
11
S3
10
D3
9
IN3
NOTES
1
To order MIL-STD-883, Class B processed parts, add /883B to T grade part numbers.
2
N = Plastic DIP; R = 0.15" Small Outline IC (SOIC); Q = Cerdip.
3
Trench isolated, latch-up proof parts. See Trench Isolation section.
TERMINOLOGY
Most positive power supply potential.
Most negative power supply potential in dual
V
SS
supplies. In single supply applications, it may be
connected to GND.
Logic power supply (+5 V).
V
L
GND
Ground (0 V) reference.
S
Source terminal. May be an input or output.
D
Drain terminal. May be an input or output.
IN
Logic control input.
Ohmic resistance between D and S.
R
ON
R
ON
vs. V
D
(V
S
) The variation in R
ON
due to a change in the ana-
log input voltage with a constant load current.
Change in R
ON
vs. temperature.
R
ON
Drift
Difference between the R
ON
of any two switches.
R
ON
Match
Source leakage current with the switch “OFF.”
I
S
(OFF)
Drain leakage current with the switch “OFF.”
I
D
(OFF)
Channel leakage current with the switch “ON.”
I
D
, I
S
(ON)
V
D
(V
S
)
Analog voltage on terminals D, S.
V
DD
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
C
IN
t
ON
t
OFF
t
D
Crosstalk
Off Isolation
Charge
Injection
“OFF” switch source capacitance.
“OFF” switch drain capacitance.
“ON” switch capacitance.
Input Capacitance to ground of a digital input.
Delay between applying the digital control input
and the output switching on.
Delay between applying the digital control input
and the output switching off.
“OFF” time or “ON” time measured between the
90% points of both switches, when switching
from one address state to another.
A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.
A measure of unwanted signal coupling through an
“OFF” switch.
A measure of the glitch impulse transferred from the
digital input to the analog output during switching.
–4–
REV. B
AD [ ANALOG DEVICES ]
