AD8531/AD8532/AD8534
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 3.0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
IB
25
30
50
60
25
30
3
mV
mV
pA
pA
pA
pA
V
dB
V/mV
μV/°C
fA/°C
fA/°C
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +85°C
Input Bias Current
5
1
Input Offset Current
IOS
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
0
38
CMRR
AVO
ΔVOS/ΔT
ΔIB/ΔT
ΔIOS/ΔT
VCM = 0 V to 3 V
RL = 2 kΩ, VO = 0.5 V to 2.5 V
45
25
20
50
20
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
VOL
IL = 10 mA
−40°C ≤ TA ≤ +85°C
IL = 10 mA
2.85
2.8
2.92
60
V
V
mV
mV
mA
Ω
Output Voltage Low
100
125
−40°C ≤ TA ≤ +85°C
Output Current
Closed-Loop Output Impedance
POWER SUPPLY
IOUT
ZOUT
250
60
f = 1 MHz, AV = 1
Power Supply Rejection Ratio
Supply Current/Amplifier
PSRR
ISY
VS = 3 V to 6 V
VO = 0 V
−40°C ≤ TA ≤ +85°C
45
55
0.70
dB
mA
mA
1
1.25
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Gain Bandwidth Product
Phase Margin
Channel Separation
NOISE PERFORMANCE
Voltage Noise Density
SR
tS
GBP
фo
CS
RL = 2 kΩ
To 0.01%
3.5
1.6
2.2
70
V/μs
μs
MHz
Degrees
dB
f = 1 kHz, RL = 2 kΩ
65
en
in
f = 1 kHz
f = 10 kHz
f = 1 kHz
45
30
0.05
nV/√Hz
nV/√Hz
pA/√Hz
Current Noise Density
Rev. F | Page 3 of 20
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