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AD847JRZ-REEL 参数 Datasheet PDF下载

AD847JRZ-REEL图片预览
型号: AD847JRZ-REEL
PDF下载: 下载PDF文件 查看货源
内容描述: [High Speed, Low Power Monolithic Op Amp]
分类和应用: 运算放大器
文件页数/大小: 58 页 / 6724 K
品牌: AD [ ANALOG DEVICES ]
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Precision Amplifiers (V
OS
<
1 mV, Bandwidth
<
50 MHz)
Zero-Drift Amplifiers
Precision, Ultralow Noise, RRIO, Zero-Drift Op Amp
The
is an ultralow noise, zero-drift operational amplifier featuring rail-to-rail input and output swing. With an offset voltage of 2.5
mV,
offset
voltage drift of 0.015
mV/°C,
and noise of 97 nV p-p (0.1 Hz to 10 Hz, A
V
= +100), the device is well suited for applications in which error sources cannot
be tolerated. With wide operating supply range of 2.2 V to 5.5 V, high gain and excellent CMRR and PSRR specifications, the
is ideal for
precision amplification of low level signals, such as position and pressure sensors, strain gages, and medical instrumentation.
Features
Low offset: 2.5
mV
maximum
• Low
noise
• 5.6
nV/
Hz at f = 1 kHz, A
V
=
+100
• 97
nV p-p at f = 0.1 Hz to 10 Hz, A
V
=
+100
• Open-loop
voltage gain: 130 dB minimum
• CMRR:
135 dB minimum
• PSRR:
130 dB minimum
• Gain
bandwidth product: 4 MHz
• Single-supply
operation: 2.2 V to 5.5 V
• Dual-supply
operation:
±1.1
V to
±2.75
V
• Rail-to-rail
input and output
• Unity-gain
stable
Application
• Thermocouple/thermopile
• Load
cell and bridge transducer
• Precision
instrumentation
• Electronic
scales
• Medical
instrumentation
• Handheld
test equipment
Zero Drift Amplifiers
Process
Part
Number
No. of
Amps
1
2
4
1
2
1
2
1
2
1
2
4
1
2
4
1
2
Supply
BW @ Slew
Voltage Rail-to-Rail
1
A
CL
Min Rate
(Min/Max)
(MHz) (V/ms)
2.7/6
RRIO
2.5
1
V
OS
Max
(mV)
TcV
OS
(mv/°C Typ)
CMRR PSRR A
VO
Noise
I /Amp I
B
Max
Min Min Min (nV/
Hz)
S
(mA Max) (pA)
(dB) (dB) (dB) @ 1 kHz
120
115
125
22
0.850
100
Packaging
SOT-23/SOIC
MSOP/SOIC
SOIC/TSSOP
MSOP/LFCSP
SC70/SOT-23
MSOP/LFCSP
SOT-23/SOIC
MSOP/SOIC
MSOP/SOIC
SOIC/TSSOP
SOIC/TSSOP
MSOP/SOIC
SOIC/TSSOP
SOIC/TSSOP
SOT-23/SOIC
MSOP/SOIC/LFCSP
Price
@ 1k
(OEM $US)
0.96
1.47
2.73
1.15
1.90
0.93
1.47
0.90
1.31
1.20
1.90
3.36
1.11
1.78
3.40
1.27
2.19
1
1
10
100
FREQUENCY (Hz)
1k
10k
VOLTAGE NOISE DENSITY (nV/√Hz)
100
V
SY
= 5V
V
CM
= VSY/2
• Low
offset voltage drift: 0.015
mV/°C
maximum
10
no 1/f noise
A
V
= 1
Voltage noise density vs. frequency.
CMOS
0.005
0.002
CMOS
CMOS
CMOS
2.2/5.5
1.8/5.5
2.7/5.5
RRIO
RRIO
RRIO
4
0.125
0.43
0.4
0.06
0.35
0.0025
0.015
0.013
0.015
0.02
0.03
115
110
115
120
110
105
130
115
115
5.3
95
50
1.500
0.017
0.180
100
70
25
CMOS
2.7/6
RRIO
1.5
0.4
0.005
0.005
120
120
125
42
0.975
50
CMOS
2.7/6
RRIO
1.5
0.4
0.005
0.005
120
120
125
51
0.850
50
CMOS
5/16
SS
1.5
2
0.009
0.03
127
127
130
60
1.500
75
*Prerelease
1
RRIO: Rail-to-rail input/output, RRO: rail-to-rail output, SS: single supply (IVR includes –V
SY
).
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