AD8012
ABSOLUTE MAXIMUM RATINGS
1
MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.8 W
microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±
2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range RM, R . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air at +25
°C
8-Lead SOIC Package:
θ
JA
= 155°C/W
8-Lead microSOIC Package:
θ
JA
= 200°C/W
The maximum power that can be safely dissipated by the AD8012
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately +150°C. Temporarily exceeding this limit may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175°C for an extended period can result in de-
vice failure.
The output stage of the AD8012 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8012 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
2.0
MAXIMUM POWER DISSIPATION – Watts
T
J
= +150 C
1.5
8-LEAD SOIC
PACKAGE
1.0
0.5
8-LEAD
microSOIC
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70
AMBIENT TEMPERATURE – C
80 90
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8012
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8012 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package
Description
8-Lead SOIC
13” Tape and Reel
7” Tape and Reel
8-Lead microSOIC
13” Tape and Reel
7” Tape and Reel
Package
Options
SO-8
SO-8
SO-8
RM-08
RM-08
RM-08
Brand
Code
Model
AD8012AR
AD8012AR-REEL
AD8012AR-REEL7
AD8012ARM
AD8012ARM-REEL
AD8012ARM-REEL7
H6A
H6A
H6A
–4–
REV. A
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