AD587
ABSOLUTE MAXIMUM RATINGS*
PIN CONFIGURATION
NOISE
8 REDUCTION
V
IN
to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Power Dissipation (+25°C) . . . . . . . . . . . . . . . . . . . . . 500 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300°C
Package Thermal Resistance
θ
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22°C/W
θ
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W
Output Protection: Output safe for indefinite short to ground and
momentary short to V
IN
.
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TP
*
1
+V
IN
2
AD587
7 TP
*
TOP VIEW
TP
*
3 (Not to Scale) 6 V
OUT
5 TRIM
GND 4
*
TP DENOTES FACTORY TEST POINT.
NO CONNECTIONS SHOULD BE MADE
TO THESE PINS.
DIE SPECIFICATIONS
Parameter
Output Voltage
Gain Adjustment
Line Regulation
13.5 V < + V
IN
< 36 V
Load Regulation
Sourcing 0 < I
OUT
< 10 mA
Sinking –10 < I
OUT
< 0 mA
Quiescent Current
Short-Circuit Current-to-Ground
Short-Circuit Currrent-to-V
OUT
The following specifications are tested at the die level for AD587JCHIPS. These die are probed at +25°C only.
(T
A
= +25°C, V
IN
= +15 V unless otherwise noted)
DIE LAYOUT
Units
AD587JCHIPS
Min Typ Max
9.990
–1
10.010 V
3
100
100
100
2
4
70
70
%
±µV/V
µV/mA
µV/mA
mA
mA
mA
Die Size: 0.081
×
0.060 Inches
NOTES
1
Both V
OUT
pads should be connected to the output.
2
Sense and force grounds must be tied together.
Die Thickness:
The standard thickness of Analog Devices Bipolar dice is 24 mils
±
2 mils.
Die Dimensions:
The dimensions given have a tolerance of
±
2 mils.
Backing:
The standard backside surface is silicon (not plated). Analog Devices does not recommend
gold-backed dice for most applications.
Edges:
A diamond saw is used to separate wafers into dice thus providing perpendicular edges half-
way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size . The perpen-
dicular edges facilitate handling (such as tweezer pick-up) while the uniform shape and size simplifies
substrate design and die attach.
Top Surface:
The standard top surface of the die is covered by a layer of glassivation . All areas are
covered except bonding pads and scribe lines.
Surface Metalization:
The metalization to Analog Devices bipolar dice is aluminum. Minimum
thickness is 10,000Å.
Bonding Pads:
All bonding pads have a minimum size of 4 mils by 4 mils. The passivation windows
have 3.5 mils by 3.5 mils minimum.
REV. D
–3–
AD [ ANALOG DEVICES ]
