AD586
DlE SPECIFlCATIONS
Parameter
Output Voltage
Gain Adjustment
Line Regulation
10.8 V < + V
IN
< 36 V
Load Regulation
Sourcing 0 < I
OUT
< 10 mA
Sinking –10 < I
OUT
< 0 mA
Quiescent Current
Short-Circuit Current-to-Ground
The following specifications are tested at the die level for AD586JCHIPS. These die are probed at 25 C
only. (T
A
= +25 C, V
IN
= +15 V unless otherwise noted)
AD586JCHIPS
Min
Typ
Max
4.980
+6
–2
5.020
Units
V
%
%
±µV/V
µV/mA
µV/mA
mA
mA
100
100
400
3
60
NOTES
1
Both V
OUT
pads should be connected to the output.
Die Thickness:
The standard thickness of Analog Devices Bipolar dice is 24 mils
±
2 mils.
Die Dimensions:
The dimensions given have a tolerance of
±
2 mils.
Backing:
The standard backside surface is silicon (not plated). Analog Devices does not
recommend gold-backed dice for most applications.
Edges:
A diamond saw is used to separate wafers into dice thus providing perpendicular
edges half-way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size. The
perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape
and size simplifies substrate design and die attach.
Top Surface:
The standard top surface of the die is covered by a layer of glassivation. All
areas are covered except bonding pads and scribe lines.
Surface Metalization:
The metalization to Analog Devices bipolar dice is aluminum.
Minimum thickness is 10,000Å.
Bonding Pads:
All bonding pads have a minimum size of 4 mils by 4 mils. The passivation
windows have 3.5 mils by 3.5 mils minimum.
ORDERING GUIDE
Model
1
Initial
Error
20 mV
20 mV
20 mV
5 mV
5 mV
5 mV
2.5 mV
2.5 mV
2 mV
5 mV
2.5 mV
2.5 mV
10 mV
2.5 mV
20 mV
Temperature
Coefficient
25 ppm/°C
25 ppm/°C
25 ppm/°C
15 ppm/°C
15 ppm/°C
15 ppm/°C
5 ppm/°C
5 ppm/°C
2 ppm/°C
15 ppm/°C
5 ppm/°C
5 ppm/°C
20 ppm/°C
10 ppm/°C
25 ppm/°C
Temperature
Range
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
–55°C to +125°C
–55°C to +125°C
0°C to +70°C
Package
Option
2
N-8
Q-8
SO-8
N-8
Q-8
SO-8
N-8
SO-8
N-8
SO-8
SO-8
Q-8
Q-8
Q-8
AD586JN
AD586JQ
AD586JR
AD586KN
AD586KQ
AD586KR
AD586LN
AD586LR
AD586MN
AD586AR
AD586BR
AD586LQ
AD586SQ
AD586TQ
AD586JCHIPS
NOTES
1
For details on grade and package offerings screened in accordance with MIL-STD-883, r efer to the Analog Devices Military
Products Databook or current AD586/883B data sheet.
2
N = Plastic DIP; Q = Cerdip; SO = Small Outline IC (SOIC).
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD586 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. C
–3–
AD [ ANALOG DEVICES ]
