AD2S83–SPECIFICATIONS
(
Parameter
THREE-STATE LEAKAGE
Current I
L
V
S
=
12 V dc
5%; V
L
= +5 V dc
Min
10%; T
A
= –40 C to +85 C)
AD2S83
Typ
Max
20
20
Units
µA
µA
Conditions
DB1–DB16 Only
±
V
S
=
±
12.0 V, V
L
= 5.5 V
V
OL
= 0 V
±
V
S
=
±
12.0 V, V
L
= 5.5 V
V
OH
= 5.0 V
10 Bit
12 Bit
14 Bit
16 Bit
RATIO MULTIPLIER
AC Error Output Scaling
177.6
44.4
11.1
2.775
12
mV/Bit
mV/Bit
mV/Bit
mV/Bit
mV
V rms/V dc
V rms/V dc
nA
MΩ
V
dB
nA/LSB
mV
nA
V
MHz
kHz/µA
kHz/µA
%/V
%/V
mV
nA
nA/°C
% FSR
% FSR
% FSR
% FSR
% Output
% Output
PHASE SENSITIVE DETECTOR
Output Offset Voltage
Gain
In Phase
In Quadrature
Input Bias Current
Input Impedance
Input Voltage
INTEGRATOR
Open-Loop Gain
Dead Zone Current (Hysteresis)
Input Offset Voltage
Input Bias Current
Output Voltage Range
VCO
Maximum Rate
VCO Rate
VCO Power Supply Sensitivity
Rate
Input Offset Voltage
Input Bias Current
Input Bias Current Tempco
Linearity of Absolute Rate
AD2S83AP
0 kHz–500 kHz
0.5 MHz–1 MHz
AD2S83IP
0 kHz–500 kHz
0.5 MHz–1 MHz
Reversion Error
AD2S83AP
AD2S83IP
POWER SUPPLIES
Voltage Levels
+V
S
–V
S
+V
L
Current
±
I
S
±
I
S
±
I
L
w.r.t. REF
w.r.t. REF
–0.882
1.0
–0.9
60
–0.918
±
0.02
150
±
8
At 10 kHz
57
90
8
1.1
8.25
8.25
60
100
1
60
63
110
5
150
+ve DIR
–ve DIR
+V
S
–V
S
8.50
8.50
8.75
8.75
+0.5
–0.5
3
12
+0.22
±
0.15
±
0.25
±
0.25
±
0.25
±
0.5
±
1.0
50
0.25
1.0
0.5
1.0
1.0
1.5
+11.4
–11.4
+4.5
±
V
S
@
±
12 V
±
V
S
@
±
12.6 V
+V
L
@
±
5.0 V
+5
±
12
±
19
±
0.5
+12.6
–12.6
+V
S
23
30
1.5
V
V
V
mA
mA
mA
All min and max specifications are guaranteed. Specifications in
boldface
are tested on all production units at final electrical test.
Specification subject to change without notice.
ORDERING GUIDE
Model
AD2S83AP
AD2S83IP
Temperature
Range
–40°C to +85°C
–40°C to +85°C
Accuracy
8 arc min
8 arc min
Package
Description
Plastic Leaded Chip Carrier
Plastic Leaded Chip Carrier
Package
Option
P-44A
P-44A
–4–
REV. D
AD [ ANALOG DEVICES ]
