TIMING—STAND-ALONE MODE (Figures 4a and 4b)
Parameter
Data Access Time
Low R/C Pulse Width
STS Delay from R/C
Data Valid After R/C Low
STS Delay After Data Valid
High R/C Pulse Width
Symbol
t
DDR
t
HRL
t
DS
t
HDR
t
HS
t
HRH
J, K, A, B Grades
Min
Typ
Max
150
50
200
25
0.6
150
0.8
1.2
Min
50
T Grade
Typ
Max
150
225
Units
ns
ns
ns
ns
µs
ns
25
0.6
150
0.8
1.2
NOTE
All min and max specifications are guaranteed.
Specifications subject to change without notice.
t
HRL
_
R/C
_
R/C
t
HRH
t
DS
STS
STS
t
DS
t
C
t
HDR
DB11 – DB0
DATA
VALID
HIGH-Z
DATA VALID
t
DDR
t
HS
DB11 – DB0
HIGH-Z
t
HDR
DATA
VALID
t
C
HIGH-Z
t
HL
Figure 4a. Stand-Alone Mode Timing Low Pulse for R/
C
ABSOLUTE MAXIMUM RATINGS*
Figure 4b. Stand-Alone Mode Timing High Pulse for R/
C
V
CC
to Digital Common . . . . . . . . . . . . . . . . . . . 0 to + 16.5 V
V
EE
to Digital Common . . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V
V
LOGIC
to Digital Common . . . . . . . . . . . . . . . . . . 0 V to +7 V
Analog Common to Digital Common . . . . . . . . . . . . . . .
±
1 V
Digital Inputs to Digital Common . . . –0.5 V to V
LOGIC
+0.5 V
Analog Inputs to Analog Common . . . . . . . . . . . . V
EE
to V
CC
20 V
IN
to Analog Common . . . . . . . . . . . . . . . . . V
EE
to +24 V
REF OUT . . . . . . . . . . . . . . . . . Indefinite Short to Common
. . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to V
CC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
Lead Temperature, Soldering (10 sec) . . . . . . . +300°C, 10 sec
Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD1674 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
WARNING!
ESD SENSITIVE DEVICE
Model
1
Temperature Range
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
INL
(T
MIN
to T
MAX
)
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
S/(N+D)
(T
MIN
to T
MAX
)
69 dB
70 dB
69 dB
70 dB
69 dB
70 dB
69 dB
70 dB
70 dB
Package
Description
Plastic DIP
Plastic DIP
Plastic SOIC
Plastic SOIC
Plastic SOIC
Plastic SOIC
Ceramic DIP
Ceramic DIP
Ceramic DIP
Package
Option
2
N-28
N-28
R-28
R-28
R-28
R-28
D-28
D-28
D-28
NOTES
1
For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or current
2
N = Plastic DIP; D = Hermetic Ceramic DIP; R = Plastic SOIC.
–6–
REV. C
AD [ ANALOG DEVICES ]
