Data Sheet
ADP2325
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, VIN = 12 V, VOUT = 3.3 V, L = 2.2 µH, COUT = 2 × 100 µF, fSW = 600 kHz, unless otherwise noted.
100
95
90
85
80
75
70
65
60
55
50
100
95
90
85
80
75
70
65
60
55
50
INDUCTOR: FDVE1040-4R7M
MOSFET: FDS8880
INDUCTOR: FDVE1040-2R2M
MOSFET: FDS8880
V
V
V
V
V
V
= 5.0V
= 3.3V
= 2.5V
= 1.8V
= 1.5V
= 1.2V
OUT
OUT
OUT
OUT
OUT
OUT
V
V
V
V
V
V
= 5.0V
= 3.3V
= 2.5V
= 1.8V
= 1.5V
= 1.2V
OUT
OUT
OUT
OUT
OUT
OUT
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
OUTPUT CURRENT (A)
OUTPUT CURRENT (A)
Figure 5. Efficiency at VIN = 12 V, fSW = 600 kHz, FPWM
Figure 8. Efficiency at VIN = 12 V, fSW = 300 kHz, FPWM
100
100
INDUCTOR: FDVE1040-4R7M
MOSFET: FDS8880
INDUCTOR: FDVE1040-2R2M
MOSFET: FDS8880
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
V
V
V
V
= 5.0V, FPWM
V
V
V
V
= 5.0V, FPWM
= 3.3V, FPWM
= 5.0V, PFM
= 3.3V, PFM
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
= 3.3V, FPWM
= 5.0V, PFM
= 3.3V, PFM
0.01
0.1
OUTPUT CURRENT (A)
1
0.01
0.1
OUTPUT CURRENT (A)
1
Figure 6. Efficiency at VIN = 12 V, fSW = 600 kHz, FPWM and PFM
Figure 9. Efficiency at VIN = 12 V, fSW = 300 kHz, FPWM and PFM
100
100
INDUCTOR: FDVE1040-1R5M
MOSFET: FDS8880
INDUCTOR: FDVE1040-4R7M
MOSFET: FDS8880
95
95
90
85
80
75
70
65
90
85
80
75
70
65
V
V
V
V
V
V
= 5.0V
= 3.3V
= 2.5V
= 1.8V
= 1.5V
= 1.2V
OUT
OUT
OUT
OUT
OUT
OUT
V
V
V
V
V
= 3.3V
= 2.5V
= 1.8V
= 1.5V
= 1.2V
OUT
OUT
OUT
OUT
OUT
60
55
50
60
55
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
OUTPUT CURRENT (A)
OUTPUT CURRENT (A)
Figure 10. Efficiency at VIN = 18 V, fSW = 300 kHz, FPWM
Figure 7. Efficiency at VIN = 5 V, fSW = 600 kHz, FPWM
Rev. 0 | Page 9 of 32
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