TABLE I. Electrical performance characteristics – Continued.
1/ Device type 01 supplied to this drawing has been characterized through all levels P, L, and R of irradiation.
Device type 02 supplied to this drawing has been characterized to level L of irradiation.
However, device type 01, is only tested at the “R” level and device type 02 is only tested at the ”L” level. Pre and Post
irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical
measurements for any RHA level, T = +25°C.
A
2/ Device type 01 may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019, condition A for device type 01 and condition D for device type 02. Device type 02 is tested at low dose rate.
3/ Not tested post irradiation.
4/ Line and load regulation specifications include the effect of self-heating.
5/ Minimum load current guaranteed by loading regulation test.
6
6/ TCV = ((V
– V ) / 5 V) x (1 / 180°C) x 10 where -55°C ≤ T ≤ +125°C.
MIN A
O
MAX
7/ Each wafer lot is tested for long-term stability at a chip temperature of 76°C for 168 hours. Maximum percent defective
size is 5 and acceptance number is 2 with sample size of 105.
SIZE
STANDARD
5962-00516
A
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
REVISION LEVEL
D
SHEET
COLUMBUS, OHIO 43218-3990
7
DSCC FORM 2234
APR 97
ADI [ ADI ]
