OP249
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 15 V, TA = 25°C, unless otherwise noted.
Table 1.
OP249A
Typ
OP249F
Typ
Parameter
Symbol Conditions
Unit
Min
Max Min
Max
0.7
1.0
Offset Voltage
Long Term Offset Voltage1
VOS
VOS
0.2
0.5
0.8
0.2
mV
mV
Offset Stability
1.5
30
6
1.5
30
6
μV/month
Input Bias Current
Input Offset Current
Input Voltage Range2
IB
IOS
IVR
VCM = 0 V, TA = 25°C
VCM = 0 V, TA = 25°C
75
25
75
25
pA
pA
V
12.5
12.5
11
80
11
V
V
−12.5
90
12
1ꢀ00
12.5
–12.5
90
12
1200
12.5
Common-Mode Rejection
Power-Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Swing
CMR
PSRR
AVO
VCM = 11 V
80
31.6
dB
μV/V
V/mV
V
VS = ꢀ.5 V to 18 V
VO = 10 V, RL = 2 kΩ
RL = 2 kΩ
50
1000
12.0
500
VO
12.0
V
−12.5
36
–12.5
36
V
mA
Short-Circuit Current Limit
ISC
Output shorted to
ground
20
50
7.0
20
50 mA
−33
5.6
22
ꢀ.7
0.9
55
–33
5.6
22
ꢀ.7
0.9
55
mA
Supply Current
ISY
No load, VO = 0 V
7.0
1.2
mA
V/μs
MHz
μs
Slew Rate
SR
GBW
tS
ΘM
ZIN
RO
RL = 2 kΩ, CL = 50 pF
18
3.5
18
3.5
Gain Bandwidth Product3
Settling Time
Phase Margin
Differential Input Impedance
Open-Loop Output Resistance
Voltage Noise
10 V step 0.01%ꢀ
0 dB gain
1.2
Degrees
Ω||pF
Ω
1012||6
35
1012||6
35
en p-p
en
0.1 Hz to 10 Hz
fO = 10 Hz
2
75
26
17
16
0.003
15
2
75
26
17
16
0.003
15
μV p-p
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
V
Voltage Noise Density
fO = 100 Hz
fO = 1 kHz
fO = 10 kHz
fO = 1 kHz
Current Noise Density
Voltage Supply Range
in
VS
ꢀ.5
18
ꢀ.5
18
1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent wafer lots at 125°C with LTPD of three.
2 Guaranteed by CMR test.
3 Guaranteed by design.
ꢀ Settling time is sample tested.
Rev. F | Page 3 of 20
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