AMP01
ELECTRICAL CHARACTERISTICS (@ VS = ؎15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25؇C, unless otherwise noted)
AMP01NBC
Typical
AMP01GBC
Typical
Parameter
Symbol
Conditions
Units
Input Offset Voltage Drift
Output Offset Voltage Drift
Input Bias Current Drift
Input Offset Current Drift
Nonlinearity
TCVIOS
TCVOOS
TCIB
0.15
20
40
0.30
50
50
µV/°C
µV/°C
pA/°C
pA/°C
%
RG
=
∞
TCIOS
3
5
G = 1000
G = 1000
0.0007
0.0007
Voltage Noise Density
en
fO = 1 kHz
G = 1000
fO = 1 kHz
G = 1000
0.1 Hz to 10 Hz
G = 1000
5
5
nV/√Hz
pA/√Hz
Current Noise Density
Voltage Noise
in
0.15
0.15
en p-p
in p-p
0.12
2
0.12
2
µV p-p
pA p-p
Current Noise
0.1 Hz to 10 Hz
G = 1000
G = 10
Small-Signal Bandwidth (–3 dB) BW
26
4.5
26
4.5
kHz
V/µs
Slew Rate
SR
Settling Time
tS
To 0.01%, 20 V Step
G = 1000
50
50
µs
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
REV. D
–7–
ADI [ ADI ]
