OP215
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (at V = ±15 V, 0ꢁC Յ T Յ 70ꢁC for E Grade, –40ꢁC Յ T Յ +85ꢁC for G Grade, unless
otherwise noted.)
S
A
A
OP215E
Type
OP215G
Type
Parameter
Symbol
Conditions
Min
Max
Min
Max
Unit
Input Offset Voltage
VOS
RS = 50 W
0.4
1.65
3.5
8.0
mV
Average Input Offset
Voltage Drift
Without External Trim1 TCVOS
3
3
15
6
4
V/∞C
V/∞C
With External Trim
TCVOSn
RP = 100 kW
Input Offset Current2
IOS
Tj = 70∞C
0.06
0.08
0.45
0.80
0.08
0.10
0.65
1.2
nA
nA
TA = 70∞C
Device Operating
Input Bias Current2
Input Voltage Range
IS
Tj = 70∞C
± 0.12 ± 0.70
± 0.16 ± 1.40
± 0.14 ± 0.9
± 0.19 ± 1.8
nA
nA
TA = 70∞C
Device Operating
IVR
10.2
–10.2
14.7
–11.4
10.1
–10.1
14.7
–11.3
V
V
Common-Mode
Rejection Ratio
CMRR
VCM = ± IVR
80
98
76
94
dB
Power Supply Rejection PSRR
Ratio
VS = ± 10 V to ± 16 V
VS = ± 10 V to ± 15 V
13
100
20
159
V/V
Large-Signal
Voltage Gain
AVO
RL Ն 2 kW
50
180
± 13
35
130
V/mV
VO = ± 10 V
Output Voltage Swing
VO
RL Ն 10 kW
± 12
± 12
± 13
V
NOTES
1Sample tested.
2Input bias current is specified for two different conditions. The Tj = 25∞C specification is with the junction at ambient temperature; the Device Operating specification is
with the device operating in a warmed up condition at 25∞C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves
of IS versus Tj and IS versus TA. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard
JFET input op amps. IS and IOS are measured at VCM = 0.
Specifications are subject to change without notice.
–3–
REV. A
ADI [ ADI ]
