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5962-01-179-4667 参数 Datasheet PDF下载

5962-01-179-4667图片预览
型号: 5962-01-179-4667
PDF下载: 下载PDF文件 查看货源
内容描述: [IC IC,TEMPERATURE SENSOR,BIPOLAR/JFET,CAN,3PIN,METAL, Analog IC:Other]
分类和应用:
文件页数/大小: 16 页 / 387 K
品牌: ADI [ ADI ]
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AD590  
GENERAL DESCRIPTION  
PTAT current. Figure 6 is the schematic diagram of the AD590.  
In this figure, Q8 and Q11 are the transistors that produce the  
PTAT voltage. R5 and R6 convert the voltage to current. Q10,  
whose collector current tracks the collector currents in Q9 and  
Q11, supplies all the bias and substrate leakage current for the  
rest of the circuit, forcing the total current to be PTAT. R5 and  
R6 are laser-trimmed on the wafer to calibrate the device at 25°C.  
The AD590H has 60 μ inches of gold plating on its Kovar leads  
and Kovar header. A resistance welder is used to seal the nickel  
cap to the header. The AD590 chip is eutectically mounted to  
the header and ultrasonically bonded to with 1 mil aluminum  
wire. Kovar composition: 53% iron nominal; 29% 1% nickel;  
17% 1% cobalt; 0.65% manganese max; 0.20% silicon max;  
0.10% aluminum max; 0.10% magnesium max; 0.10% zirconium  
max; 0.10% titanium max; and 0.06% carbon max.  
Figure 7 shows the typical V–I characteristic of the circuit at  
25°C and the temperature extremes.  
The AD590F is a ceramic package with gold plating on its  
Kovar leads, Kovar lid, and chip cavity. Solder of 80/20 Au/Sn  
composition is used for the 1.5 mil thick solder ring under the  
lid. The chip cavity has a nickel underlay between the metallization  
and the gold plating. The AD590 chip is eutectically mounted in  
the chip cavity at 410°C and ultrasonically bonded to with 1 mil  
aluminum wire. Note that the chip is in direct contact with the  
ceramic base, not the metal lid. When using the AD590 in die  
form, the chip substrate must be kept electrically isolated  
(floating) for correct circuit operation.  
+
R1  
R2  
2601040Ω  
Q2  
Q5  
Q3  
C1  
Q1  
Q4  
Q6  
26pF  
Q12  
Q8  
Q7  
R4  
11kΩ  
CHIP  
SUBSTRATE  
R3  
5kΩ  
66MILS  
Q9  
Q10  
Q11  
1
V+  
8
1
R5  
146Ω  
R6  
820Ω  
Figure 6. Schematic Diagram  
42MILS  
V–  
+150°C  
423  
THE AD590 IS AVAILABLE IN LASER-TRIMMED CHIP FORM;  
CONSULT THE CHIP CATALOG FOR DETAILS  
+25°C  
–55°C  
298  
218  
Figure 5. Metallization Diagram  
CIRCUIT DESCRIPTION1  
The AD590 uses a fundamental property of the silicon  
transistors from which it is made to realize its temperature  
proportional characteristic: if two identical transistors are  
operated at a constant ratio of collector current densities, r,  
then the difference in their base-emitter voltage is (kT/q)(In r).  
Because both k (Boltzmans constant) and q (the charge of an  
electron) are constant, the resulting voltage is directly  
proportional to absolute temperature (PTAT).  
0
1
2
3
4
5
6
30  
SUPPLY VOLTAGE (V)  
Figure 7. V–I Plot  
1 For a more detailed description, see M.P. Timko, “A Two-Terminal IC  
Temperature Transducer,” IEEE J. Solid State Circuits, Vol. SC-11, p. ꢀ84-ꢀ88,  
Dec. 19ꢀ6. Understanding the Specifications–AD590.  
In the AD590, this PTAT voltage is converted to a PTAT current  
by low temperature coefficient thin-film resistors. The total  
current of the device is then forced to be a multiple of this  
Rev. D | Page 6 of 16