®
ACT8938
Rev 3, 23-Dec-11
ABSOLUTE MAXIMUM RATINGSꢀ
PARAMETER
VALUE
UNIT
VP1, VP2 to GP12
VP3 to GP3
-0.3 to +6
V
BAT, VSYS, INL to GA
CHGIN to GA
-0.3 to +6
-0.3 to +14
V
V
V
V
V
V
SW1, OUT1 to GP12
-0.3 to (VVP1 + 0.3)
-0.3 to (VVP2 + 0.3)
-0.3 to (VVP3 + 0.3)
-0.3 to +6
SW2, OUT2 to GP12
SW3, OUT3 to GP3
nIRQ, nLBO, nPBSTAT, nRSTO, nSTAT to GA
nPBIN, ACIN, CHGLEV, ISET, LBI, PWRHLD, nHIB, REFBP, SCL, SDA, TH, VSEL to
GA
-0.3 to (VSYS+0.3)
V
OUT4, OUT5, OUT6, OUT7 to GA
GP12, GP3 to GA
-0.3 to (VINL + 0.3)
-0.3 to +0.3
-40 to 85
V
V
Operating Ambient Temperature
Maximum Junction Temperature
°C
°C
125
Maximum Power Dissipation
2.7
W
TQFN55-40 (Thermal Resistance θJA = 30oC/W)
Storage Temperature
-65 to 150
300
°C
°C
Lead Temperature (Soldering, 10 sec)
ꢀ: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
Innovative PowerTM
- 7 -
www.active-semi.com
Active-Semi Proprietary―For Authorized Recipients and Customers
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
Copyright © 2011 Active-Semi, Inc.
ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
