®
ACT8938
Rev 3, 23-Dec-11
ActivePathTM CHARGER ELECTRICAL CHARACTERISTICS CONT’D
(VCHGIN = 5.0V, TA = 25°C, unless otherwise specified.)
PARAMETER
CHARGER
TEST CONDITIONS
MIN
TYP
MAX UNIT
BAT Reverse Leakage Current
BAT to VSYS On-Resistance
V
CHGIN = 0V, VBAT = 4.2V, IVSYS = 0mA
8
µA
70
mꢀ
Fast Charge
1.2
0.13
4.2
4.2
ISET Pin Voltage
V
Precondition
TA = -20°C to 70°C
TA = -40°C to 85°C
4.179
4.170
4.221
V
Charge Termination Voltage
VTERM
4.230
1
ACIN = VSYS, CHGLEV = VSYS -10%
ICHG
+10%
ACIN = VSYS, CHGLEV = GA
ACIN = GA, CHGLEV = VSYS
ACIN = GA, CHGLEV = GA
ACIN = VSYS, CHGLEV = VSYS
ACIN = VSYS, CHGLEV = GA
ACIN = GA, CHGLEV = VSYS
ACIN = GA, CHGLEV = GA
-10%
400
80
I
CHG/5
+10%
mA
VBAT = 3.8V
ISET = 6.8K
Charge Current
R
450
500
90
100
10% ICHG
10% ICHG
45
VBAT = 2.7V
RISET = 6.8K
Precondition Charge Current
Precondition Threshold Voltage
mA
45
V
BAT Voltage Rising
BAT Voltage Falling
ACIN = VSYS, CHGLEV = VSYS
2.75
2.85
3.0
V
Precondition Threshold
Hysteresis
V
150
mV
10% ICHG
10% ICHG
ACIN = VSYS, CHGLEV = GA
ACIN = GA, CHGLEV = VSYS
ACIN = GA, CHGLEV = GA
END-OF-CHARGE Current
Threshold
VBAT = 4.15V
mA
45
45
205
80
Charge Restart Threshold
Precondition Safety Timer
Total Safety Timer
VTERM - VBAT, VBAT Falling
PRETIMO[ ] = 10
190
220
mV
min
hr
TOTTIMO[ ] = 10
5
Thermal Regulation Threshold
100
°C
ꢀ: RISET (kꢀ) = 2336 × (1V/ICHG (mA)) - 0.205
Innovative PowerTM
Active-Semi Proprietary―For Authorized Recipients and Customers
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
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