ACT8810
Active- Semi
Rev 4, 01-Oct-09
ActivePathTM CHARGER
ELECTRICAL CHARACTERISTICS CONT’D
(VCHG_IN = 5V, TA = 25°C, unless otherwise specified.)
PARAMETER
CHARGER
TEST CONDITIONS
MIN
TYP
MAX UNIT
BAT Reverse Leakage Current
BAT to VSYS On-Resistance
VCHG_IN = 0V, VBAT = 4.2V, IVSYS = 0mA
5
µA
80
mꢀ
Fast Charge
1.02
0.12
4.2
ISET Pin Voltage
V
Precondition
TA = -20°C to 70°C
TA = -40°C to 85°C
4.179
4.170
4.221
V
Battery Regulation Voltage
4.230
ACIN = VSYS, CHGLEV = VSYS -10%
ISET1
+10%
ACIN = VSYS, CHGLEV = GA
-16% 50%ISET +16%
Smallest
-10% (450mA or +10%
ISET)
ACIN = GA, CHGLEV = VSYS
Charge Current
VBAT = 3.5V
mA
Smallest
-10% (90mA or +10%
ISET)
ACIN = GA, CHGLEV = GA
ACIN = VSYS, CHGLEV = VSYS
ACIN = VSYS, CHGLEV = GA
ACIN = GA, CHGLEV = VSYS
12%ISET
12%ISET
12%ISET
Precondition Charge Current
Precondition Threshold Voltage
VBAT = 2.5V
mA
Smallest
(90mA or
12%ISET)
ACIN = GA, CHGLEV = GA
VBAT Voltage Rising
2.75
2.85
100
2.95
V
Precondition Threshold Hysteresis VBAT Voltage Falling
mV
ACIN = VSYS, CHGLEV = VSYS -10% 10%ISET +10%
ACIN = VSYS, CHGLEV = GA
ACIN = GA, CHGLEV = VSYS
ACIN = GA, CHGLEV = GA
-10% 10%ISET +10%
End-of-Charge Current Threshold VBAT = 4.2V
mA
-10%
-10%
150
5%ISET +10%
5%ISET +10%
Charge Restart Threshold
BTR Scale Factor
VSET - VBAT, VBAT Falling
170
0.24
1
190
mV
s/ꢀ
hr
Precondition Safety Timer
Fast Charge Safety Timer
THERMAL REGULATION
Thermal Regulation Threshold
RBTR = 47kꢀ, tPRCHG = 0.24 × RBTR(ꢀ)/180(min)
RBTR = 47kꢀ, tCHG = 0.24 × RBTR(ꢀ)/60(min)
3
hr
100
145
°C
ꢀ: ISET = 640 × (1V/RISET
)
Innovative PowerTM
- 41 -
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Copyright © 2009 Active-Semi, Inc.
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of Philips Electronics.
ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
