ACT8810QJ3EB-T 参数 Datasheet PDF下载

Active-Semi

ABSOLUTE MAXIMUM RATINGS

PARAMETER

CHG_IN to GA

t < 1ms and duty cycle <1%

Steady State

VP1 to GP1, VP2 to GP2, VP3 to GP3

BAT, VSYS, INL to GA

SW1, OUT1 to GP1

SW2, OUT2 to GP2

SW3, OUT3 to GP3

ON1, ON2, ON3, ISET, ACIN, VSEL, DCCC, CHGLEV, TH, SCL, SDA, REFBP, nIRQ,

nRSTO, nSTAT, BTR, nPBIN to GA

OUT4, OUT5, OUT6 to GA

Operating Ambient Temperature

Maximum Junction Temperature

Maximum Power Dissipation

TQFN55-40 (Thermal Resistance

θ

JA

= 30

o

C/W)

Storage Temperature

Lead Temperature (Soldering, 10 sec)

ACT8810

Rev 4, 01-Oct-09

VALUE

-0.3 to +18

-0.3 to +14

-0.3 to +6

-0.3 to +6

-0.3 to (V

VP1

+0.3)

-0.3 to (V

VP2

+0.3)

-0.3 to (V

VP3

+0.3)

-0.3 to +6

-0.3 to (V

INL

+0.3)

-40 to 85

125

2.7

-65 to 150

300

UNIT

V

V

V

V

V

V

V

V

V

°C

°C

W

°C

°C

: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may

affect device reliability.

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TM

are trademarks of Active-Semi.

I

2

C

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