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ACT88430QJ101-T 参数 Datasheet PDF下载

ACT88430QJ101-T图片预览
型号: ACT88430QJ101-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Advanced PMU for Microcontrollers and Solid State Drive Applications]
分类和应用: 微控制器
文件页数/大小: 42 页 / 1108 K
品牌: ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
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ACT88430QJ-T  
Rev 1.0, 24-Oct-2018  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
VALUE  
UNIT  
All I/O and Power pins except PGND_B1, PGND_B2, PGND_B3, PGND_B4, GND  
Grounds: Any PGND referenced to GND  
-0.3 to 6  
V
-0.3 to +0.3  
V
SW_Bx to PGNDx  
-0.3 to VIN + 1  
-0.3 to VIN + 0.3  
-0.3 to VINx + 0.3  
-0.3 to VIN + 0.3  
-0.3 to VIO_IN + 0.3  
-2 to 1.6  
V
V
FB_Bx to PGNDx  
OUT_LDOx to PGNDx  
EXT_PG  
V
V
EXT_EN  
V
SW1 HBM ESD (Note 2)  
Junction to Ambient Thermal Resistance, QFN (Note3)  
Operating Junction Temperature  
kV  
°C/W  
°C  
26  
-40 to 125  
Storage Temperature  
-55 to 150  
°C  
Note1: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect  
device reliability.  
Note2: All other pins meet +/- 2kV HBM ESD  
Note3: Measured on Active-Semi Evaluation Kit  
RECOMMENDED OPERATING CONDITIONS  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
VIN, VIN_B1, VIN_B2, VIN_B3, VIN_B4, VIN_LDO1,  
VIN_LDO23  
2.7  
5.5  
V
VIO_IN  
1.62  
2.4  
5.5  
5.5  
5.5  
V
V
VIN_LDO1  
VIN_LDO23  
1.62  
SW_B2,SW_B3,SW_B4  
SW_B1  
1.6  
3.2  
Average lifetime operating current. QFN. (Note 1)  
Operating Junction Temperature  
A
°C  
-40  
125  
Note1: This temperature range is used for lifetime reliability testing.  
Innovative PowerTM  
www.active-semi.com  
Copyright © 2016-2018 Active-Semi, Inc.  
ActiveSwitcherTM is a trademark of Active-Semi.  
I2CTM is a trademark of NXP  
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