ACT88320QI-T
Rev 2.0, 20-Dec-2017
OVP, INRUSH NMOS SWITCH, ELECTRICAL CHARACTERISITICS
(VIN = 3.3V, TA = 25°C, unless otherwise specified.)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Input Voltage Range (VIN)
VIN Input Current
2.7
5.5
1
V
µA
µA
Ω
IC Disabled
OVGATE Pull-up Current
OVGATE = 0V
10
10
85
80
OVGATE Discharge Resistance
Overcurrent Shutdown Threshold
Overcurrent Warning Threshold
Voltage across current sense resistor
Percent of shutdown voltage
70
100
mV
%
72.5
87.5
Start up from 0V to 5.0V on OVGATE.
CGate = 1nF
Soft-Start Slew Rate
500
µs
Over Current Deglitch Time
Steady state operation
40
85
µs
µs
ms
V
Over Current Blanking Time
Blanking time during power up
Retry time after Over Current
OVSNS POK Threshold (falling)
OVSNS POK Threshold (rising)
OVSNS POK Threshold Hysteresis
OVSNS OV Threshold (rising)
OVSNS OV Threshold hysteresis
42
2.5
2.7
200
6
V
100
200
mV
V
400
50
mV
After OVSNS POK to OVGATE rising,
Startup Delay
40
µs
CGate = 1nF
Standby Current into OVSNS and OVSNS_M
After OVSNS POK, steady state mode
OVSNS = 3.3V
40
5.4
8
µA
VOVGATE Voltage (VOVGATE – VIN)
V
OVSNS = 5V
Innovative PowerTM
www.active-semi.com
Copyright © 2017 Active-Semi, Inc
ActiveSwitcherTM is a trademark of Active-Semi.
10
ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
