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ACT5880_14 参数 Datasheet PDF下载

ACT5880_14图片预览
型号: ACT5880_14
PDF下载: 下载PDF文件 查看货源
内容描述: [15 Channels Advanced PMU for Smart Phone]
分类和应用:
文件页数/大小: 87 页 / 1327 K
品牌: ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
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ACT5880  
Rev 2, 03-Sep-13  
RB, are used to condition the string to have the  
desired ratios at the wanted hot threshold  
temperature and cold threshold temperature.  
USB circuit, the pull-up of charge state LED, the  
pull-up for BATID input, the pull-up for ACIN input  
and the pull-up for TH input. It may not be allowed  
to apply higher voltage on the CHGIN considering  
those other connections.  
Figure 18:  
The Battery Thermal Condition Circuit.  
Typical Application Consideration  
CHGIN  
The charger circuit is well compensated, can be  
used to charge various capacities cells without  
modifying the input and output decoupling caps,  
which is 6.8μF~22μF for the input and 4.7μ~10μF  
for the output.  
0. 748  
RA  
=A·R25  
Battery  
Assembly  
ACT5880  
TH  
0. 349  
RB =B·R25  
NTC  
=r·R25  
Autonomic and Slave Charge  
GA  
(Ground )  
The charge state machine in the ACT5880 is a  
complete autonomy. It senses the condition  
parameters, manages charge profile and indicates  
charge status without any foreign involvement.  
The normal temperature range cells typically work  
in -20°C to 40°C while the extended range is -20°C  
to 60°C. Giving the a NTC thermistor with 25°C  
characteristic resistance of R25, the resistance ratio  
at hot threshold temperature is rH and at cold  
threshold temperature is rC, the proportion factor A  
and B for having the 2 precise ratios 0.748 and  
0.349 are found as:  
The charger wakes up the host system, and calls  
for host system involvement if it is configured so.  
With this mechanism, the ACT5880 could work as a  
slave charger with host system involvement on  
demand.  
Li+ Poly Cell and Li+ Cell Charge  
The scheme and the default setting are optimized  
for single cell Li+ poly charging. Li+ poly cells with  
4.2V charge termination voltage, which are the  
most common battery types in phone designs.  
A=0.411·(rCrH)  
B=0.220·rC1.22·rH  
It is necessary to verify how much power is desired  
to bias the selected NTC thermister, to assure no  
excessive self heating generated.  
In case of using 18650 cylindrical cell, which is  
typically with 4.1V charge termination voltage (the  
termination voltage is anode material dependent, is  
specified for a battery model), applying 4.2V on it  
does not cause instant damage. It is possible to  
start with 4.2V battery regulation voltage and then  
program it to 4.1V later, but this is not rational for  
safe charging. Contact factory for ordering parts  
with 4.1V default.  
The resistance ratio r is the ratio of the resistance at  
a temperature to the resistance at 25°C. This ratio  
is found from the NTC specification in a table or a  
curve plot.  
Reverse Block  
The ACT5880 has a reverse block circuit in the  
charge path. Whenever the VCHGIN is less than  
NiMH cells charge  
V
VBAT, as low as to 0V, the reverse block circuit  
Though the charge scheme is not optimized for  
charging NiMH cells, its current limit and voltage  
limit, auto-restart features make the ACT5880  
charger a practically applicable charger in fix  
wireless terminal applications for 3 NiMH cells  
charging with its 4.2V to 4.4V battery regulation  
voltages. In this kind of applications, the cells are  
floating charged at 1.4V to 1.47V per cell, which is  
in the good range for floating and uses the most  
part of the battery capability. Figure 19 shows the  
typical curves for NiMH battery.  
prevents the reverse leakage from VBAT to CHGIN  
and the state machine jumps into Sleep State. This  
reverse block circuit does not work in LDO mode  
operation.  
Input Over Voltage  
The CHGIN allows applying continuous 12V and  
momentary 14V on it. When the voltage applied on  
CHGIN is greater than the over voltage threshold,  
the state machine jumps into Sleep State and  
charging stops.  
As in the real application circuitry often has other  
connection to the CHGIN, such as the VBUS of  
www.active-semi.com  
Copyright © 2013 Active-Semi, Inc.  
Active-Semi ConfidentialDo Not Copy or Distribute  
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.  
I2CTM is a trademark of NXP.  
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