ACT412
Rev 1, 30-Oct-13
ELECTRICAL CHARACTERISTICS CONT’D
(VDD = 18V, LM = 0.5mH, RCS = 0.75ꢀ, VOUT = 13V, NP = 68, NS =12, NA = 17, TA = 25°C, unless otherwise specified,12V0.4A applica-
tion)
PARAMETER
SYMBOL TEST CONDITIONS
MIN
TYP
MAX UNIT
GATE DRIVE
Gate Rise Time
TRISE
TFALL
RONLO
RONHI
VDD = 10V, CL = 1nF
VDD = 10V, CL = 1nF
ISINK = 30mA
150
90
250
ns
ns
ꢀ
Gate Falling Time
Gate Low Level ON-Resistance
Gate High Level ON-Resistance
10
ISOURCE = 30mA
31
ꢀ
GATE = 18V, before VDD
turn-on
Gate Leakage Current
1
µA
COMPENSATION
Inside Compensate Resistor
Output Sink Current
RCOMP
ACT412
0
kꢀ
ICOMP_SINK VFB = 3V, VCOMP = 2V
15
15
40
µA
ICOMP SOUR
_
Output Source Current
VFB = 1.5V, VCOMP = 2V
40
µA
CE
Transconductance of Error Amplifier
Maximum Output Voltage
Minimum Output Voltage
CS to COMP Gain
Gm
71
3.5
0.4
2
µA/V
V
VCOMPMAX
VCOMPMIN
VFB = 1.5V
VFB = 3V
V
V/V
V/V
µA
Pre-Amp Gain
1
COMP Leakage Current
OSCILLATOR
COMP = 2.5V
1
Maximum Switching
fMAX
108
65
120
75
132
kHz
%
Maximum Duty Cycle
DMAX
Minimum Switching Frequency
fMIN
1164
Hz
Innovative PowerTM
- 4 -
www.active-semi.com
Copyright © 2013 Active-Semi, Inc.
Active-Semi Proprietary―For Authorized Recipients and Customers
ActivePSRTM is a trademark of Active-Semi.
ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
