Rev PrA, 13-Aug-07
ACT4075
UNIT
V
V
V
V
V
A
°C/W
W
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
IN to G
EN to G
SW to G
BS to SW
FB, COMP to G
Continuous SW Current
Junction to Ambient Thermal Resistance (θ
JA
)
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 sec)
VALUE
-0.3 to +34
-0.3 to V
IN
+ 0.3
-1 to V
IN
+ 1
-0.3 to +8
-0.3 to 6
Internally limited
46
1.8
-40 to 150
-55 to 150
300
:
Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
IN
= 12V, T
A
= 25°C, unless otherwise specified.)
PARAMETER
Input Voltage
Feedback Voltage
High-Side Switch On Resistance
Low-Side Switch On Resistance
SW Leakage
Current Limit
COMP to Current Limit Transcon-
ductance
Error Amplifier Transconductance
Error Amplifier DC Gain
Switching Frequency
Short Circuit Switching Frequency
Maximum Duty Cycle
Minimum Duty Cycle
Enable Threshold Voltage
Enable Pull Up Current
Supply Current in Shutdown
IC Supply Current in Operation
Thermal Shutdown Temperature
SYMBOL
V
IN
V
FB
R
ONH
R
ONL
TEST CONDITIONS
V
OUT
= 2.5V, I
LOAD
= 0A to 2.5A
MIN
4.5
TYP
MAX UNIT
32
V
V
mΩ
Ω
10
µA
A
A/V
µA/V
V/V
490
kHz
kHz
%
%
1.3
V
µA
20
2
µA
mA
°C
1.198 1.222 1.246
100
10
V
EN
= 0, V
IN
= 12V, V
SW
= 0V
0
3.5
ΔI
LOAD
/ΔI
COMP
ΔI
COMP
= ±10µA
340
V
FB
= 0V
V
FB
= 1.1V, PWM mode
V
FB
= 1.4V, PFM mode
Hysteresis = 0.1V
Pin pulled up to V
IN
when left uncon-
nected
V
EN
= 0
V
EN
= 3V, not switching
Hysteresis = 10°C
0.7
5
3
550
4000
410
40
90
0
1
2
6
0.85
160
I
LIM
G
COMP
G
EA
A
VEA
f
SW
D
MAX
Innovative Products.
Active Solutions.
-3-
Copyright © 2007 Active-Semi, Inc.
ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
