ACT30
Active- Semi
Rev 5, 05-Jun-09
ABSOLUTE MAXIMUM RATINGSc
PARAMETER
VDD, FREQ to GND
VALUE
-0.3 to 6
20
UNIT
V
VDD Current
mA
V
DRV, DRV1, DRV2 to GND
Continuous DRV, DRV1, DRV2 Current
-0.3 to 18
Internally limited
0.6
A
TO-92
Maximum Power Dissipation
W
SOT23-B
0.39
Operating Junction Temperature
Storage Temperature
-40 to 150
-55 to 150
300
˚C
˚C
˚C
Lead Temperature (Soldering, 10 sec)
c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
(VVDD = 4V, TJ = 25°C, unless otherwise specified.)
PARAMETER
VVDD Start Voltage
SYMBOL
TEST CONDITIONS
Rising edge
MIN TYP MAX UNIT
VSTART
4.75
5
5.25
10.5
11.5
7.25
V
DRV1 must be
higher than this
voltage to start up.
ACT30A
ACT30B
8.6
9.6
6.8
DRV1 Start Voltage
VDRVST
V
DRV1 Short-Circuit Detect Threshold
VSCDRV
VUV
6.35
V
V
V
VDD Under-Voltage Threshold
VDD Clamp Voltage
Falling edge
10mA
3.17 3.35 3.63
5.15 5.45 5.95
0.23 0.45
V
V
Startup Supply Current
Supply Current
IDDST
IDD
VVDD = 4V before VUV
mA
mA
kHz
0.7
65
75
1
Switching Frequency
fSW
ACT30A/B or FREQ = 0
ACT30A, VVDD = 4V
ACT30B, VVDD = 4V
VVDD = 4.6V
50
67
60
80
83
Maximum Duty Cycle
Minimum Duty Cycle
DMAX
DMIN
%
%
3.5
ACT30A
340
680
400
480
920
Effective Current Limit
ILIM
VVDD = VUV + 0.1V
mA
ACT30B with
DRV1 = DRV2
800
V
VDD to DRV1 Current Coefficient
GGAIN
RVDD
-0.29
9
A/V
VDD Dynamic Impedance
kΩ
DRV1 or DRV2 Driver On-
Resistance
RDRV1,
RDRV2
IDRV1 = IDRV2 = 0.05A
3.6
Ω
DRV1 Rise Time
1nF load, 15Ω pull-up
30
20
12
ns
ns
µA
DRV1 Fall Time
1nF load, 15Ω pull-up
DRV1 and DRV2 Switch Off Current
Driver off, VDRV1 = VDRV2 = 10V
30
Innovative PowerTM
ActiveSwitcherTM is a trademark of Active-Semi.
- 3 -
www.active-semi.com
Copyright © 2009 Active-Semi, Inc.
ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
