MIL-PRF-38535K
APPENDIX G
G.3.4.1 Design methodology change. Changes in the design methodology to be evaluated by the TRB shall
include, but not be limited to, changes in the following areas:
a. Technology database (cell/design library).
b. Design flow.
c. Design system (computer automated design (CAD), design rules).
d. Software updates.
e. Model or modeling procedures.
f. Configuration management.
g. Radiation hardness assurance (RHA) (if applicable).
h. Electrical performance.
i. Geometry size reduction.
G.3.4.2 Fabrication process change. Changes in the fabrication process to be evaluated by the TRB shall include,
but not be limited to, changes in the following areas:
a. Fabrication process sequence or process limits.
b. Fabrication process materials or material specifications, including epitaxial (EPI) layer thickness.
c. Photoresistive materials or material specifications.
d. Doping material source, concentration, or process technique (e.g., ion implantation versus diffusion).
e. Cross section diffusion profile.
f. Passivation or glassivation material, thickness or technique (including addition or deletion of passivation).
g. Metallization system (pattern, material, deposition or etching technique, line width or thickness).
h. Baseline (DSCC-VQC-42 form or equivalent).
i. Conductor, resistor, or dielectric materials.
j. Wafer fabrication move from one line, or building, to another.
k. Passivation, or glassivation, process temperature and time.
l. Oxidation or diffusion process, oxide composition and thickness, oxidation temperature and time.
m. Sintering or annealing temperature and time.
n. SEC and how it is tested.
o. Method of mask making.
p. Parametric monitor and how it is tested.
144
ACTEL [ Actel Corporation ]
