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5962-0151801QYC 参数 Datasheet PDF下载

5962-0151801QYC图片预览
型号: 5962-0151801QYC
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 32000 Gates, 206MHz, 2880-Cell, CMOS, CQFP208, CERAMIC, QFP-208]
分类和应用: 可编程逻辑
文件页数/大小: 217 页 / 1554 K
品牌: ACTEL [ Actel Corporation ]
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MIL-PRF-38535K  
APPENDIX C  
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)  
JESD57 - Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion  
Irradiation.  
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology  
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)  
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute  
the documents. These documents also may be available in or through libraries or other informational services.)  
C.2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this  
document and the references cited herein (except for related specification sheets), the text of this document takes precedence.  
Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been  
obtained.  
C.3 REQUIREMENTS  
C.3.1 General. Microcircuits supplied to this document shall be manufactured and tested in accordance with approved  
baseline manufacturing flow and the requirements herein. RHA qualified manufacturer listing (QML) manufacturers shall meet  
all of the requirements of MIL-PRF-38535 and the additional requirements specified herein. The Technology Review Board  
(TRB) shall not make major changes to the baselined design rules, processes, procedures, or testing without notifying the  
qualifying activity prior to implementation of the change.  
C.3.2 TRB duties. The TRB duties shall be as outlined in G.3.2.2.  
C.3.2.1 TRB/RSS. In the case of a Radiation Source of Supply (RSS) (see 6.4.23), the RSS shall establish a TRB and  
representatives from the device manufacturer, assembly facility, and test facility shall be part of the TRB. The RSS TRB shall  
be responsible for all aspects of the device manufacturing process. Details of how all aspects of the device manufacturing  
processes are controlled shall be documented in the RSS quality management (QM) plan. These include conversion of  
customer requirements, design, wafer fabrication, assembly, test, RHA testing and verification, and characterization for device  
specification.  
C.3.3 RHA QM plan. A RHA QM plan shall be developed to document the major elements of the manufacturer's QML  
process (G.3.3). This plan establishes the procedures to be followed to ensure that the devices meet the Radiation Hardness  
Assured Capability Level (RHACL). The RHA QM plan shall be kept current and up-to-date and reflect all major changes to the  
RHACL.  
C.3.3.1 Qualification testing to RHA levels Qualification to a RHA level shall consist of characterization to the highest offered  
RHA level of total ionizing dose (TID). The conditions for radiation testing shall consist of exposing the devices in a step-stress  
manner to the highest dose level offered and as a minimum the two next consecutive lower RHA levels. The levels are  
identified as follows: 3K Rad(Si), 10K Rad(Si), 30K Rad(Si), 50K Rad(Si), 100 K Rad(Si), 300K Rad(Si), 500K Rad(Si), 1M  
Rad(Si). The radiation testing plan (QM Plan) and qualification to the appropriate quality and reliability assurance level for  
device classes B, Q, S, V, Y or T shall be submitted for QA approval.  
C.3.4 RHA/QML certification requirements. See 3.4.1 herein. In addition to standard flow certification the manufacturer’s  
RHA certification testing shall be performed by a laboratory that has received suitability from the qualifying activity (QA).  
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