5. Performance
5-1. Maximum Ratings
Rating
Value
Unit
dBm
dBm
V
Source Power (s. imp. 50Ω, duty cycle 1:100)
Source Power (source impedance 50Ω)
DC Voltage
PS
PS
20
10
VDC
Tstg
TA
0
Storage Temperature Range
Operating Temperature Range
-40 to +85
-40 to +85
5-2. Electronic Characteristics
Characteristic
Minimum
Typical
Maximum
Unit
MHz
dB
Center Frequency
fC
IL
--
--
140.00
--
13
--
Insertion Loss (@140.00MHz)
3dB Bandwidth
--
--
BW3
Δα
16
MHz
Amplitude Ripple (max peak to adjacent valley)
(80% of BW3)
133.60 …. 146.40 MHz
--
--
0.5
7
0.9
14
dB
°
Phase Ripple (p-p)
(80% of BW3)
Δφ
αrel
133.60 …. 146.40 MHz
Relative Attenuation (relative to IL)
100.00 …. 128.70 MHz
40
40
40
40
45
45
45
45
--
--
--
--
dB
dB
dB
dB
128.70 …. 129.00 MHz
151.00 …. 152.30 MHz
152.30 …. 195.18 MHz
Group Delay Ripple (p-p)
(80% of BW3) 133.60 …. 146.40 MHz
Δτ
--
80
140
ns
Reflected Wave Signal Suppression
0.70μs …. 3.75μs after main pulse
35
--
38
--
--
dB
Temperature Coefficient of Frequency
TCf
-87
ppm/K
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling!
1. The frequency fC is defined as the midpoint between the 3dB frequencies.
2. Unless noted otherwise, all measurements are made with the filter installed in the specified test fixture that is
connected to a 50Ω test system with VSWR≤1.2:1. The test fixture L and C are adjusted for minimum insertion
loss at the filter center frequency, fC. Note that insertion loss, bandwidth, and passband shape are dependent on
the impedance matching component values and quality.
3. Unless noted otherwise, specifications apply over the entire specified operating temperature range.
4. The specifications of this device are based on the test circuit shown above and subject to change or obsolescence
without notice.
5. All equipment designs utilizing this product must be approved by the appropriate government agency prior to
manufacture or sale.
6. Our liability is only assumed for the Surface Acoustic Wave (SAW) component(s) per se, not for applications,
processes and circuits implemented within components or assemblies.
Iss1 C1u Date 13-7-2011
Page 2 of 2
ACT [ ADVANCED CRYSTAL TECHNOLOGY ]
